5.8 GHz high-efficiency RF–DC converter based on common-ground multiple-stack structureopen access
- Authors
- Bae, J.[Bae, J.]; Yi, S.-H.[Yi, S.-H.]; Choi, W.[Choi, W.]; Koo, H.[Koo, H.]; Hwang, K.C.[Hwang, K.C.]; Lee, K.-Y.[Lee, K.-Y.]; Yang, Y.[Yang, Y.]
- Issue Date
- 1-Aug-2019
- Publisher
- MDPI AG
- Keywords
- Microwave power transfer; Multiple-stack RF-DC converter; Rectenna array; Rectifier; RF isolation network; Voltage doubler
- Citation
- Sensors (Switzerland), v.19, no.15
- Indexed
- SCIE
SCOPUS
- Journal Title
- Sensors (Switzerland)
- Volume
- 19
- Number
- 15
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/14741
- DOI
- 10.3390/s19153257
- ISSN
- 1424-8220
- Abstract
- This paper presents a 5.8 GHz RF–DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple–stack structure. An RF isolation network (RFIN) for the multiple-stack RF–DC converter is proposed to combine the DC output voltage of each stack without separating its RF ground from the DC ground. The RFIN is designed using micro-strip transmission lines on a single-layer printed circuit board (PCB) with a common ground for the bottom plate. A 4-stack RF–DC converter based on a class-F voltage doubler for each stack was implemented to verify the proposed RFIN for the multiple-stack and common-ground structure. The performances of the implemented 4-stack RF–DC converter were evaluated in comparison to the single-stack converter that was also implemented. The size of the implemented 4-stack RF–DC converter using bare-chip Schottky diodes is 24 mm × 123 mm on a single-layer PCB. For an input power of 21 dBm for each stack of the RF–DC converter with a load resistance of 4 kΩ, a high efficiency of 73.1% and a high DC output voltage of 34.2 V were obtained. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
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