Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
- Authors
- Yoon, J.S.[Yoon, J.S.]; Tewari, A.[Tewari, A.]; Shin, C.[Shin, C.]; Jeon, S.[Jeon, S.]
- Issue Date
- Jul-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Ferroelectric films; hafnium zirconium oxide; high-pressure annealing; metal-ferroelectric-metal; nonvolatile memory
- Citation
- IEEE Electron Device Letters, v.40, no.7, pp.1076 - 1079
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 40
- Number
- 7
- Start Page
- 1076
- End Page
- 1079
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/15021
- DOI
- 10.1109/LED.2019.2918797
- ISSN
- 0741-3106
- Abstract
- We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications. © 1980-2012 IEEE.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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