A CMOS RF Energy Harvester with 47% Peak Efficiency Using Internal Threshold Voltage Compensation
- Authors
- Khan, D.[Khan, D.]; Oh, S.J.[Oh, S.J.]; Shehzad, K.[Shehzad, K.]; Verma, D.[Verma, D.]; Khan, Z.H.N.[Khan, Z.H.N.]; Pu, Y.G.[Pu, Y.G.]; Lee, M.[Lee, M.]; Hwang, K.C.[Hwang, K.C.]; Yang, Y.[Yang, Y.]; Lee, K.-Y.[Lee, K.-Y.]
- Issue Date
- Jun-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- CMOS technology; dual-band; internal threshold voltage cancelation (IVC); radio frequency (RF)-dc CMOS converter; RF energy harvesting
- Citation
- IEEE Microwave and Wireless Components Letters, v.29, no.6, pp.415 - 417
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Microwave and Wireless Components Letters
- Volume
- 29
- Number
- 6
- Start Page
- 415
- End Page
- 417
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/15140
- DOI
- 10.1109/LMWC.2019.2909403
- ISSN
- 1531-1309
- Abstract
- This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)-dc CMOS converter employing the internal threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF-dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from -9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from -2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF-dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future. © 2019 IEEE.
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