External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET

Abstract

Gate configuration phase transition fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistor (MOSFET) without an external resistor is proposed using Pb(Zr0.52Ti0.48)O-3 (PZT)-based threshold selector (TS). Under 1 mu A compliance current condition, the PZT-based TS exhibits its threshold switching property at similar to 0.9 V (threshold voltage) and similar to 0.01 V (hold voltage) over similar to 4 orders of current. And its off-resistance is measured as similar to 2.3 x 10(11) Omega. The PZT-based gate configuration phase transition FDSOI MOSFET without an external resistor was fabricated by connecting the PZT-based TS to a baseline FDSOI MOSFET. It is confirmed that the fabricated external resistor-free phase transition FDSOI MOSFET can operate regardless of the aforementioned 1 mu A of compliance current condition. This device has not only demonstrated the feature of similar to 4 mV/decade subthreshold slope at similar to 0.96 V of gate voltage, but it also has decreased the gate leakage current of the baseline FDSOI MOSFET by similar to 10 times at 0 V of gate voltage and similar to 320 times at 2 V of gate voltage.