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Cited 17 time in webofscience Cited 20 time in scopus
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Color of Copper/Copper Oxideopen access

Authors
Kim, S.J.[Kim, S.J.]Kim, S.[Kim, S.]Lee, J.[Lee, J.]Jo, Y.[Jo, Y.]Seo, Y.-S.[Seo, Y.-S.]Lee, M.[Lee, M.]Lee, Y.[Lee, Y.]Cho, C.R.[Cho, C.R.]Kim, J.-P.[Kim, J.-P.]Cheon, M.[Cheon, M.]Hwang, J.[Hwang, J.]Kim, Y.I.[Kim, Y.I.]Kim, Y.-H.[Kim, Y.-H.]Kim, Y.-M.[Kim, Y.-M.]Soon, A.[Soon, A.]Choi, M.[Choi, M.]Choi, W.S.[Choi, W.S.]Jeong, S.-Y.[Jeong, S.-Y.]Lee, Y.H.[Lee, Y.H.]
Issue Date
Apr-2021
Publisher
John Wiley and Sons Inc
Keywords
atomic sputtering epitaxy (ASE); coherent oxidation; color control; interfaces; laser-oxide lithography; single-crystal copper thin films
Citation
Advanced Materials, v.33, no.15
Indexed
SCIE
SCOPUS
Journal Title
Advanced Materials
Volume
33
Number
15
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/1629
DOI
10.1002/adma.202007345
ISSN
0935-9648
Abstract
Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. Coherent propagation of an oxidation front in single-crystal Cu thin film is demonstrated to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain-boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color red/green/blue indices is realized by precise control of the oxide-layer thickness; the samples cover ≈50.4% of the standard red/green/blue color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from the oxide “pigment” (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. Furthermore, laser-oxide lithography is demonstrated with micrometer-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality. © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH
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Science > Department of Physics > 1. Journal Articles
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