Large-Area High-Quality AB-Stacked Bilayer Graphene on h-BN/Pt Foil by Chemical Vapor Deposition
- Authors
- Qan, Y[Qan, Yongteng]; Kang, DJ[Kang, Dae Joon]
- Issue Date
- 29-Aug-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- bilayer graphene; h-BN; Pt foil; large area; chemical vapor deposition; carrier mobility
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.34, pp.29069 - 29075
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 34
- Start Page
- 29069
- End Page
- 29075
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/18911
- DOI
- 10.1021/acsami.8b06862
- ISSN
- 1944-8244
- Abstract
- Large-area, high-quality bilayer graphene (BLG) has attracted great interest because of its immense potential for many viable applications. However, its growth is still greatly limited owing to its small size and low carrier mobility. In this article, we report the successful growth of large-area, high-quality AB-stacked BLG on hexagonal boron nitride (h-BN)/Pt foil by chemical vapor deposition (CVD). Optical microscopy and scanning electron microscopy observations reveal the formation of uniform and continuous BLG films with sizes of up to 500 pm, which are 4-5 times larger than those reported elsewhere for CVD-grown BLG films. A large carrier mobility of up to 9000 cm(2) V-1 s(-1) is observed for the BLG films grown on h-BN/Pt foils under ambient conditions. We also propose a plausible growth mechanism of BLG growth on h-BN/Pt foils. Our findings will contribute for the better understanding of the fundamental BLG physics and the development of BLG-based devices. of BLG-based devices.
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