Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl-2 and BCl3 plasmaDamage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
- Other Titles
- Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
- Authors
- Choi, JH[Choi, Jong Hoon]; Kim, SJ[Kim, Sung Jin]; Kim, HT[Kim, Hyung Tae]; Cho, SM[Cho, Sung Min]
- Issue Date
- Jun-2018
- Publisher
- KOREAN INSTITUTE CHEMICAL ENGINEERS
- Keywords
- Indium-gallium-zinc-oxide (IGZO); Thin Film Transistor (TFT); Plasma Damage; Plasma Etching
- Citation
- KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.35, no.6, pp.1348 - 1353
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF CHEMICAL ENGINEERING
- Volume
- 35
- Number
- 6
- Start Page
- 1348
- End Page
- 1353
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/19803
- DOI
- 10.1007/s11814-018-0034-8
- ISSN
- 0256-1115
- Abstract
- Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl-2 plasma treatment to evaluate the IGZO damage. The BCl3 and/or Cl-2 plasma deteriorated the IGZO TFT performance significantly even after a short exposure time in the plasma. We propose a new wet etching process to remove a source/drain metal without damaging the underlying IGZO layer. The wet etching process can be utilized for the fabrication of IGZO TFT array using a roll-to-roll process via a self-aligned imprint lithography technique.
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Collections - Information and Communication Engineering > Department of Semiconductor Systems Engineering > 1. Journal Articles
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