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Reduction of charge trapping in high-κ HfZrO4 gate insulators
- Issue Date
- 2018
- Publisher
- International Display Workshops
- Keywords
- Hafnium oxide; High-k dielectric; Zirconium oxide
- Citation
- Proceedings of the International Display Workshops, v.2, pp.536 - 538
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 2
- Start Page
- 536
- End Page
- 538
- ISSN
- 1883-2490
- Abstract
- Hafnium-zirconium-oxide (HfZrO4) films prepared by incorporating hydrogen peroxide (H2O2) exhibited reduced capacitance-voltage hysteresis compared to virgin HfZrO4. These were resulted from the reduction of the oxygen vacancies and charge trapping. The impact of H2O2 on the electrical behaviors was identified by analyzing border and interface. © 2018 International Display Workshops. All rights reserved.
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Related Researcher
- CHOI, BYOUNG DEOG
- Information and Communication Engineering (Electronic and Electrical Engineering)