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Synthesis of Indium Complexes for Thin Film Transistor Applications Bearing N-Alkoxy Carboxamide Ligands

Authors
Lee, J.H.[Lee, J.H.]Jung, E.A.[Jung, E.A.]Lee, G.Y.[Lee, G.Y.]Han, S.H.[Han, S.H.]Park, B.K.[Park, B.K.]Lee, S.W.[Lee, S.W.]Son, S.U.[Son, S.U.]Kim, C.G.[Kim, C.G.]Chung, T.-M.[Chung, T.-M.]
Issue Date
22-Jun-2018
Publisher
Wiley-Blackwell
Keywords
alkoxy carboxamide ligands; crystal structure; Indium; Indium precursors; TFT channel material
Citation
ChemistrySelect, v.3, no.23, pp.6691 - 6695
Indexed
SCIE
SCOPUS
Journal Title
ChemistrySelect
Volume
3
Number
23
Start Page
6691
End Page
6695
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/24205
DOI
10.1002/slct.201801329
ISSN
2365-6549
Abstract
By reacting equimolar amount of trimethylindium with various N-alkoxy carboxamidate type-ligands in a single step reaction, new series of indium complexes (1-3), [In(CH3)2(L)]2 (L1H= N-methoxypropionamide (mpaH), L2H=N-ethoxy-2-methyl propanamide (empaH), L3H=N-ethoxy-2,2-dimethyl propanamide (edpaH)), were successfully synthesized. All complexes were fully characterized by FTIR and NMR spectroscopy along with elemental and thermogravimetric (TG) analyses. While complex 1 and 2 were solid in room temperature, complex 3 which relatively bulkier ligand L3H was introduced was in liquid state. Among them, complex 1 was structurally characterized by single crystal X-ray diffraction. Complex 1 existed in a tetragonal I4(1)/a space group that consist of a pair enantiomers. A sharp weight loss between 130 °C and 230 °C in a single step in TGA for all complexes showed outstanding volatility properties with lowest residual mass of 10% which are a crucial factor in thin film industry. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
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