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Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell
- Authors
- Kim, S.[Kim, S.]; Iftiquar, S.M.[Iftiquar, S.M.]; Park, J.[Park, J.]; Pham, D.P.[Pham, D.P.]; Shin, C.[Shin, C.]; Yi, J.[Yi, J.]
- Issue Date
- 2018
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Amorphous materials; Photovoltaic cells; Silicon; Wide band gap semiconductors
- Citation
- 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, pp.1 - 4
- Journal Title
- 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
- Start Page
- 1
- End Page
- 4
- ISSN
- 0000-0000
- Abstract
- Single junction n-i-p type amorphous silicon solar cell was investigated with various p-type window layers. A high doped silicon oxide (P1) layer was used to extract holes from the active layer while a highly conducting micro-crystalline silicon p-type layer was used as an electrical contact layer with the transparent conducting oxide front electrode. When electrical conductivity of the second (P2) layer was raised (to 1.1 S.cm-1) the open circuit voltage and short circuit current density of the cells increased. This P2 layer was placed in between P1 and front electrode. Optical band gap of the p-type layers remain close to 2.0 eV. With an optimum fabrication condition of the p-layers, the open circuit voltage and short circuit current density of the cells were found to reach 900 mV and 11 mA/cm2 respectively. © 2017 IEEE.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)