Analysis of flow inside a CVD chamber with wafer batch structure

Abstract

Gas flow between wafers inside a tube of a chemical vapor deposition chamber, which is a semiconductor fabrication equipment, was analyzed. A control volume was assumed to be limited in the tube, and the two- and threedimensional internal flows were calculated numerically. To increase the deposition rate and uniformity on the wafer in the process of fabrication of the semiconductor, the active gas flow should be indispensable between the wafers; thus, it is proposed to manufacture both eccentric wafer batch and inclined wafer batch structures. This research shows that the internal gas flow was uniform and unidirectional and its velocity increased when the wafer batch was eccentric for the difference in passage width, and the wafer batch was inclined for the pressure difference within the wafer spacing. © 2018 The Korean Society of Mechanical Engineers.