Characteristics of InZnSnO Thin Films Deposited by Dual Magnetron Sputtering for Thin Films Transistors

Abstract

Indium zinc tin oxide (IZTO) thin films were synthesized on glass substrates by a dual magnetron sputtering method at room temperature using two IZTO targets. We investigated the electrical, optical structural properties of the IZTO thin films for use in oxide thin film transistors (oxide-TFTs). The IZTO films fabricated with various RF powers showed a uniform distribution of In, O, Zn, and Sn atoms. However, the concentration of Sn and Zn atoms in the IZTO film increased and the In atom concentration decreased with the increase of RF power. The IZTO film that was grown at an RF power of 110 W exhibited a low resistivity (6.5x10(-4)Omega-cm), high optical transmittance (83%) in the visible region, and uniform surface morphology. The oxide-TFTs fabricated with the IZTO gate electrode provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the IZTO film.