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SCIE
SCOPUS
Reduction in GaAs interfacial defects via structural phase variation of hydrogenated silicon films
Phong, Pham D.; Kim, T.; Lee, S.;
Yi, J.
Article
Issue Date
2020
Citation
Infrared Physics and Technology, v.111
Publisher
Elsevier B.V.
1
Discover
Author
Kim, T.
1
Lee, S.
1
Phong, Pham D.
1
Subject
Cross sectional transmission elec...
1
GaAs surface
1
Gallium arsenide
1
High resolution transmission elec...
1
Hydrogenated amorphous silicon
1
Hydrogenated silicon
1
Hydrogenation
1
III-V materials
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III-V semiconductors
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Interfacial defect
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Date Issued
2020
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Infrared Physics and Technology
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