Reduction in GaAs interfacial defects via structural phase variation of hydrogenated silicon films
- Authors
- Phong, Pham D.; Kim, T.; Lee, S.; Yi, J.
- Issue Date
- Dec-2020
- Publisher
- Elsevier B.V.
- Keywords
- GaAs surface; Hydrogenated amorphous silicon; III-V materials; Interfacial defects
- Citation
- Infrared Physics and Technology, v.111
- Indexed
- SCIE
SCOPUS
- Journal Title
- Infrared Physics and Technology
- Volume
- 111
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/6488
- DOI
- 10.1016/j.infrared.2020.103534
- ISSN
- 1350-4495
1879-0275
- Abstract
- GaAs surface passivation involves the structural phase variation of thin hydrogenated silicon layers from amorphous to microcrystalline phases. An intermediate phase—known as a mixed phase, wherein small crystalline grains are embedded in an amorphous matrix—is identified via Raman spectra and cross-sectional transmission electron microscopy images from amongst the varying phases. When compared with amorphous and microcrystalline silicon passivation layers, mixed-phase silicon layers showed significantly enhanced radiative recombination, which was detected using photoluminescence spectra at the Si/GaAs interface. In addition, the native oxide status of the GaAs surface, owing to Ga–O and As–O bonds detected using X-ray photoelectron spectroscopy spectra, is considerably lowered owing to the mixed-phase silicon deposition. It is thus concluded that mixed-phase silicon layers show high potential for reducing GaAs interfacial defects in optoelectronic devices. © 2020 Elsevier B.V.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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