AlXGa1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire
- Authors
- Akter, A.[Akter, A.]; Yoo, G.[ Yoo, G.]; Kim, S.[ Kim, S.]; Baac, H.W.[Baac, H.W.]; Heo, J.[ Heo, J.]
- Issue Date
- May-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Absorption; GaN; Intraband; Nanowire
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3279 - 3284
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3279
- End Page
- 3284
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/29193
- DOI
- 10.1166/jnn.2017.14060
- ISSN
- 1533-4880
- Abstract
- The electronic intraband absorption in InGaN nanodisks embedded in GaN nanowires with several kinds of cladding materials and without cladding was theoretically investigated. The cladding layer was 5 nm thick, and AlN, GaN, and Al0.4Ga0.6N were considered. The strain distribution, internal electric field, and intraband absorption in the nanodisks were calculated using the elastic energy minimization method and the single-band Schrodinger equation implemented in Nextnano3. For a plain nanowire without cladding, an inhomogeneous strain in the disk caused a piezoelectric field and deformation potential, yielding band-bending and a higher electron probability density in the periphery of the disk. An InGaN nanodisk embedded in a cladding GaN nanowire exhibited a higher intraband absorption. The case of the GaN cladding was optimal owing to the homogeneous surroundings of the disk.
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