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Effect of Hydrogen Gas Ratio on the Characteristics of Pulsed DC-Magnetron Sputtered ITO Films in Amorphous/Crystalline Silicon Heterojunction Solar Cells

Authors
Kim, S.[Kim, S.]Jung, J.[ Jung, J.]Kim, Y.[Kim, Y.]Le, A.H.T.[ Le, A.H.T.]Ahn, S.[ Ahn, S.]Park, J.[ Park, J.]Kim, Y.[ Kim, Y.]Ai Dao, V.[ Ai Dao, V.]Lee, J.[Lee, J.]Lee, Y.-J.[ Lee, Y.-J.]Yi, J.[Yi, J.]
Issue Date
May-2017
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Anti-Reflection Layer; Binding Energy; HIT Solar Cell; Hydrogen Flow Ratio; Pulsed DC Magnetron Sputtering
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3229 - 3232
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
17
Number
5
Start Page
3229
End Page
3232
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/29201
DOI
10.1166/jnn.2017.14098
ISSN
1533-4880
Abstract
This study investigates the effect of hydrogen gas ratio [H-2/H-2+Ar] had on the structural, optical and electrical properties of ITO films for use in amorphous/crystalline silicon hetero-junction solar cells. The pulsed DC magnetron sputtered ITO films showed a higher optical transmittance for a hydrogen gas ratio of 3.2%. The lowest sheet resistance (43.12 Omega/square) and resistivity (3.25x10(-4) Omega.cm) were observed for ITO films where the hydrogen gas ratio was in the range from 1.31 to 3.22%. The Hall mobility of the ITO films decreased from 55.3 to 42.5 cm(2)/V.s with an increase in the hydrogen gas ratio from 1.31 to 3.2%. The surface morphology and crystallinity of films improved for the low hydrogen gas ratio while the characteristics of the ITO films deteriorated when the hydrogen ratio was higher than 3.2%. Then, we fabricated amorphous/crystalline silicon hetero-junction solar cells using ITO films for the front anti-reflection layer, and a hydrogen gas ratio of 3.22% resulted in a short circuit current density (J(sc)) of 38.17 mA/cm(2) and an efficiency of 19.02%.
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