Silicon germanium active layer with graded band gap and mu c-Si:H buffer layer for high efficiency thin film solar cells
- Authors
- Pham, DP[Pham, Duy Phong]; Kim, SH[Kim, Sangho]; Park, JJ[Park, Jinjoo]; Le, AT[Le, AnhHuy Tuan]; Cho, JY[Cho, Jaehyun]; Jung, JH[Jung, Junhee]; Iftiquar, SM[Iftiquar, S. M.]; Yi, J[Yi, Junsin]
- Issue Date
- Dec-2016
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Thin film silicon germanium solar cells; Band-gap profiling; mu c-Si:H buffer layers
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.56, pp.183 - 188
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 56
- Start Page
- 183
- End Page
- 188
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/34271
- DOI
- 10.1016/j.mssp.2016.08.011
- ISSN
- 1369-8001
- Abstract
- We investigated solar cells with graded band gap hydrogenated amorphous silicon germanium active layer and hydrogenated microcrystalline silicon buffer layer at the interface of intrinsic and n-type doped layer. A significantly improved, 10.4% device efficiency was observed in this type of single junction solar cell. The intrinsic type microcrystalline silicon buffer layer is thought to play dual roles in the device; as a crystalline seed-layer for growth of n-type hydrogenated microcrystalline silicon layer and helping efficient electron collection across the i/n interface. Based on these, an enhancement in cell parameters such as the open-circuit voltage (V-oc), and fill factor (FF) was observed, where the FF and V-oc reaches up to 69% and 0.85 V respectively. Our investigation shows a simple way to improve device performance with narrow-gap silicon germanium active layer in solar cells in comparison to the conventionally constant band gap device structure. (C) 2016 Elsevier Ltd. All rights reserved.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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