Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, WJ[Yu, Woo Jong] | - |
dc.contributor.author | Vu, QA[Quoc An Vu] | - |
dc.contributor.author | Oh, H[Oh, Hyemin] | - |
dc.contributor.author | Nam, HG[Nam, Hong Gi] | - |
dc.contributor.author | Zhou, HL[Zhou, Hailong] | - |
dc.contributor.author | Cha, S[Cha, Soonyoung] | - |
dc.contributor.author | Kim, JY[Kim, Joo-Youn] | - |
dc.contributor.author | Carvalho, A[Carvalho, Alexandra] | - |
dc.contributor.author | Jeong, M[Jeong, Munseok] | - |
dc.contributor.author | Choi, H[Choi, Hyunyong] | - |
dc.contributor.author | Neto, AHC[Castro Neto, A. H.] | - |
dc.contributor.author | Lee, YH[Lee, Young Hee] | - |
dc.contributor.author | Duan, XF[Duan, Xiangfeng] | - |
dc.date.accessioned | 2021-07-31T05:45:33Z | - |
dc.date.available | 2021-07-31T05:45:33Z | - |
dc.date.created | 2021-06-22 | - |
dc.date.issued | 2016-11-09 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/34377 | - |
dc.description.abstract | Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS2/graphene heterostructures by creating a device with two distinct regions containing one-layer and seven-layer MoS2 to exclude other extrinsic factors. Photoresponse studies reveal that photoresponsivity in one-layer MoS2 is surprisingly higher than that in seven-layer MoS2 by seven times. Spectral-dependent studies further show that the internal quantum efficiency in one-layer MoS2 can reach a maximum of 65%, far higher than the 7% in seven-layer MoS2. Our theoretical modelling shows that asymmetric potential barriers in the top and bottom interfaces of the graphene/one-layer MoS2/graphene heterojunction enable asymmetric carrier tunnelling, to generate usually high photoresponsivity in one-layer MoS2 device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | VERTICAL HETEROSTRUCTURES | - |
dc.subject | GRAPHENE HETEROSTRUCTURES | - |
dc.subject | INSULATOR-TRANSITION | - |
dc.subject | LAYERED MATERIALS | - |
dc.subject | FILMS | - |
dc.subject | ELECTRONICS | - |
dc.subject | TRANSISTORS | - |
dc.subject | CRYSTALS | - |
dc.subject | MOS2 | - |
dc.title | Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, WJ[Yu, Woo Jong] | - |
dc.contributor.affiliatedAuthor | Vu, QA[Quoc An Vu] | - |
dc.contributor.affiliatedAuthor | Oh, H[Oh, Hyemin] | - |
dc.contributor.affiliatedAuthor | Nam, HG[Nam, Hong Gi] | - |
dc.contributor.affiliatedAuthor | Jeong, M[Jeong, Munseok] | - |
dc.contributor.affiliatedAuthor | Lee, YH[Lee, Young Hee] | - |
dc.identifier.doi | 10.1038/ncomms13278 | - |
dc.identifier.scopusid | 2-s2.0-84995488505 | - |
dc.identifier.wosid | 000387267700001 | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.7 | - |
dc.relation.isPartOf | NATURE COMMUNICATIONS | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | VERTICAL HETEROSTRUCTURES | - |
dc.subject.keywordPlus | GRAPHENE HETEROSTRUCTURES | - |
dc.subject.keywordPlus | INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | LAYERED MATERIALS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | MOS2 | - |
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