Improvement of the short channel effect in PMOSFETs using cold implantation
- Authors
- Lee, SH[Lee, Suk Hun]; Park, SG[Park, Se Geun]; Jeong, SH[Jeong, Seong Hoon]; Jung, HC[Jung, Hyuck-Chai]; Kim, IG[Kim, Il Gweon]; Kang, DH[Kang, Dong-Ho]; Nam, HJ[Nam, Hyo-Jik]; Kim, DJ[Kim, Dae Jung]; Lee, KP[Lee, Kyu Pil]; Choi, JS[Choi, Joo Sun]; Jung, W[Jung, Woosuk]; Park, Y[Park, Yongkook]; Choi, C[Choi, Changhwan]; Park, JH[Park, Jin-Hong]
- Issue Date
- Oct-2016
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Semiconductor; Electronic materials; Diffusion; Defect; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.82, pp.31 - 34
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 82
- Start Page
- 31
- End Page
- 34
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/35069
- DOI
- 10.1016/j.materresbull.2016.02.027
- ISSN
- 0025-5408
- Abstract
- In this paper, to suppress transient enhanced dopant diffusion and improve short channel effects, cold implantation (cold-IIP) was applied to contact PLUG implantation in P-channel metal oxide semiconductor field effect transistors (PMOSFETs). A shallow dopant profile was formed by the suppression of transient enhanced diffusion (TED) due to the reduction of end-of-range (EOR) defects. Threshold voltage roll-off and off current (I-off) increment, which are caused by a reduction in the distance between the gate and contact, were improved compared with room temperature implantation (RT-IIP). Additionally, the drain induced barrier lowering was improved, and the on-current improvement was attributed to reducing the contact resistance through the reduction of EOR defects. The contact resistance was reduced by similar to 6% of the RT-IIP. In the DRAM device, the standby current at a short propagation delay time (t(pD)) was reduced effectively due to the decrease in the Ice and contact resistance for the cold-IIP case. (C) 2016 Elsevier Ltd. All rights reserved.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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