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Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates
- Authors
- Heo, S[Heo, Sung]; Chung, J[Chung, JaeGwan]; Lee, JC[Lee, Jae Cheol]; Song, T[Song, Taewon]; Kim, SH[Kim, Seong Heon]; Yun, DJ[Yun, Dong-Jin]; Lee, HI[Lee, Hyung Ik]; Kim, K[Kim, KiHong]; Park, GS[Park, Gyeong Su]; Oh, JS[Oh, Jong Soo]; Kwak, DW[Kwak, Dong Wook]; Lee, D[Lee, DongWha]; Cho, HY[Cho, Hoon Young]; Tahi, D[Tahi, Dahlang]; Kang, HJ[Kang, Hee Jae]; Choi, BD[Choi, Byoung-Deog]
- Issue Date
- Oct-2016
- Publisher
- WILEY-BLACKWELL
- Keywords
- defect states; GIZO; REELS; TSEE; PICTS; XPS
- Citation
- SURFACE AND INTERFACE ANALYSIS, v.48, no.10, pp.1062 - 1065
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE AND INTERFACE ANALYSIS
- Volume
- 48
- Number
- 10
- Start Page
- 1062
- End Page
- 1065
- ISSN
- 0142-2421
- Abstract
- The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01eV is related to the oxygen vacancy defect. Copyright (c) 2016 John Wiley & Sons, Ltd.
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Related Researcher
- CHOI, BYOUNG DEOG
- Information and Communication Engineering (Electronic and Electrical Engineering)