Zero-Dimensional PbS Quantum Dot-InGaZnO Film Heterostructure for Short-Wave Infrared Flat-Panel Imager
- Authors
- Choi, HT[Choi, Hyun Tae]; Kang, JH[Kang, Ji-Hoon]; Ahn, J[Ahn, Jongtae]; Jin, J[Jin, Junyoung]; Kim, J[Kim, Jaeyoung]; Park, S[Park, Soohyung]; Kim, YH[Kim, Yong-Hoon]; Kim, H[Kim, Heedae]; Song, JD[Song, Jin Dong]; Hwang, GW[Hwang, Gyu Weon]; Im, S[Im, Seongil]; Shim, W[Shim, Wooyoung]; Lee, YT[Lee, Young Tack]; Park, MC[Park, Min-Chul]; Hwang, DK[Hwang, Do Kyung]
- Issue Date
- Aug-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- PbS quantum dot; InGaZnO; phototransistor; 1.3 mu m SWIR imager; heterostructure
- Citation
- ACS PHOTONICS, v.7, no.8, pp.1932 - 1941
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS PHOTONICS
- Volume
- 7
- Number
- 8
- Start Page
- 1932
- End Page
- 1941
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/3511
- DOI
- 10.1021/acsphotonics.0c00594
- ISSN
- 2330-4022
- Abstract
- There is a growing demand for human-eye-invisible short-wave infrared (SWIR) detection due to its potential in applications in areas such as medical diagnostics, environmental monitoring, and night vision. PbS colloidal quantum dots (QDs) are a promising light absorber for SWIR detection. Herein, we report on a PbS QD/InGaZnO (IGZO) heterostructure-based phototransistor and flat-panel imager for human-eye-safe SWIR photodetection and high-resolution imaging. Such hybrid phototransistors show good electrical performance and obvious photoresponse behaviors with a maximum responsivity of 10(4) A/W and specific detectivity of 10(12 )Jones under 1310 nm SWIR illumination. We found that PbS QD ligand molecules significantly impact the environmental stability. Phototransistors featuring a tetrabutylammonium iodide (TBAI) ligand exhibit excellent air stability with no serious degradation after exposure to air for 3 weeks, while phototransistors with ethanedithiol (EDT) ligands lose their SWIR detecting capability within 2 weeks. Such an improved air stability may be correlated with the TBAI ligand passivation effect that is confirmed by X-ray photoemission spectroscopy analyses. PbS QDs are patterned on the flexible IGZO transistor array by photolithographic lift-off method for implementing a more practical imaging pixel array. Furthermore, we demonstrate a prototype of 1.3 mu m SWIR flat-panel image sensor array, establishing its potential application in advanced developments as a gate-tunable, highly sensitive, high-resolution, and large area flat-panel SWIR imager.
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