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Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
- Authors
- Choi, J[Choi, Jaeho]; Park, S[Park, Sunghak]; Lee, J[Lee, Joohee]; Hong, K[Hong, Kootak]; Kim, DH[Kim, Do-Hong]; Moon, CW[Moon, Cheon Woo]; Park, GD[Park, Gyeong Do]; Suh, J[Suh, Junmin]; Hwang, J[Hwang, Jinyeon]; Kim, SY[Kim, Soo Young]; Jung, HS[Jung, Hyun Suk]; Park, NG[Park, Nam-Gyu]; Han, S[Han, Seungwu]; Nam, KT[Nam, Ki Tae]; Jang, HW[Jang, Ho Won]
- Issue Date
- 17-Aug-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v.28, no.31, pp.6562 - +
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 31
- Start Page
- 6562
- End Page
- +
- ISSN
- 0935-9648
- Abstract
- Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3NH3PbI3/Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 x 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.
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Related Researcher
- JUNG, HYUN SUK
- Engineering (Advanced Materials Science and Engineering)