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Cited 2 time in webofscience Cited 3 time in scopus
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Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of-118 dB

Authors
Abbasizadeh, H.[Abbasizadeh, H.]Cho, S.-H.[Cho, S.-H.]Yoo, S.-S.[ Yoo, S.-S.]Lee, K.-Y.[Lee, K.-Y.]
Issue Date
Aug-2016
Publisher
IEEK PUBLICATION CENTER
Keywords
Bandgap reference (BGR); Current-mode regulator; High PSRR; Line regulation; Low voltage
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.4, pp.528 - 533
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Volume
16
Number
4
Start Page
528
End Page
533
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/35689
DOI
10.5573/JSTS.2016.16.4.528
ISSN
1598-1657
Abstract
A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage V-reg for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a 0.35 mu m CMOS technology. The BGR circuit occupies 0.024 mm(2) of the die area and consumes 200 mu W from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of 60 ppm/degrees C is obtained in the range of -40 to 120 degrees C.
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