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Synthesis of CuInS2 by Sulfide Ion-Exchange of CuIn(OH)(5) PrecursorsSynthesis of CuInS2 by Sulfide Ion-Exchange of CuIn(OH)5 Precursors
- Other Titles
- Synthesis of CuInS2 by Sulfide Ion-Exchange of CuIn(OH)5 Precursors
- Authors
- Jung, S[Jung, Seonho]; Lee, S[Lee, Sangnam]; Cha, JH[Cha, Ji-Hyun]; Jung, DY[Jung, Duk-Young]
- Issue Date
- Jun-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- CuInS2; Bimetallic hydroxide precursor; Sulfide ion-exchange; Chalcopyrite semiconductor
- Citation
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.37, no.6, pp.835 - 840
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Volume
- 37
- Number
- 6
- Start Page
- 835
- End Page
- 840
- ISSN
- 0253-2964
- Abstract
- CuInS2 semiconductor was synthesized from CuIn(OH)(5) precursors via facile anion exchange in aqueous Na2S solution at room temperature. CuIn(OH)(5) was prepared from copper and indium salts and NaOH by co-precipitation in aqueous solution as a polycrystalline. The sulfide exchange reaction did not alter the copper to indium ratio. The reaction resulted in stoichiometric amounts of sulfur in the CuInS2 sample at room temperature. Fourier transform infrared spectra and ion chromatography were used to analyze the impurities, including chloride and nitrate in the prepared samples. CuInS2 showed a chalcopyrite crystal structure after annealing at 500 degrees C under 4% hydrogen-mixed argon atmosphere. The bandgap of the CuInS2 thin film device was estimated to be 1.46 eV.
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