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Carrier lifetimes in thin-film photovoltaics

Authors
Baek, D.[Baek, D.]
Issue Date
Oct-2015
Publisher
한국물리학회
Keywords
Lifetime; Thin film; CdTe; CIGS; Photoluminescence; TRPL
Citation
Journal of the Korean Physical Society, v.67, no.6, pp.1064 - 1070
Indexed
SCIE
SCOPUS
KCI
Journal Title
Journal of the Korean Physical Society
Volume
67
Number
6
Start Page
1064
End Page
1070
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/42962
DOI
10.3938/jkps.67.1064
ISSN
0374-4884
Abstract
The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current. © 2015, The Korean Physical Society.
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