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A Study of High-Voltage p-Type MOSFET Degradation under AC Stress
- Authors
- Lee D.[Lee D.]; Na C.[Na C.]; Lee C.[Lee C.]; Lee C.[Lee C.]; Hur S.[Hur S.]; Song D.[Song D.]; Choi J.[Choi J.]; Choi B.[Choi B.]
- Issue Date
- 2015
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- AC stress; Fowler-Nordheim (FN) degradation; high-voltage (HV) p-type MOSFET; negative-bias temperature instability (NBTI); saturation.
- Citation
- IEEE Transactions on Electron Devices, v.62, no.9, pp.2940 - 2944
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 62
- Number
- 9
- Start Page
- 2940
- End Page
- 2944
- ISSN
- 0018-9383
- Abstract
- In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy. © 1963-2012 IEEE.
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Related Researcher
- CHOI, BYOUNG DEOG
- Information and Communication Engineering (Electronic and Electrical Engineering)