Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopantopen access
- Authors
- Yun, SJ[Yun, Seok Joon]; Duong, DL[Duong, Dinh Loc]; Ha, DM[Ha, Doan Manh]; Singh, K[Singh, Kirandeep]; Phan, TL[Phan, Thanh Luan]; Choi, W[Choi, Wooseon]; Kim, YM[Kim, Young-Min]; Lee, YH[Lee, Young Hee]
- Issue Date
- May-2020
- Publisher
- WILEY
- Keywords
- gate-controlled spintronics; gate tunable magnetism; magnetic domains; magnetic semiconductors; room temperature ferromagnetism; vanadium-doped tungsten diselenide
- Citation
- ADVANCED SCIENCE, v.7, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED SCIENCE
- Volume
- 7
- Number
- 9
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/4729
- DOI
- 10.1002/advs.201903076
- ISSN
- 2198-3844
- Abstract
- Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of approximate to 10(5) at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.
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Collections - Graduate School > Energy Science > 1. Journal Articles
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