Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation
- Authors
- Song, X.[Song, X.]; Gao, J.[Gao, J.]; Nie, Y.[Nie, Y.]; Gao, T.[Gao, T.]; Sun, J.[Sun, J.]; Ma, D.[Ma, D.]; Li, Q.[Li, Q.]; Chen, Y.[Chen, Y.]; Jin, C.[Jin, C.]; Bachmatiuk, A.[Bachmatiuk, A.]; Rümmeli, M.H.[Rümmeli, M.H.]; Ding, F.[Ding, F.]; Zhang, Y.[Zhang, Y.]; Liu, Z.[Liu, Z.]
- Issue Date
- 2015
- Citation
- Nano Research, v.8, no.10, pp.3164 - 3176
- Journal Title
- Nano Research
- Volume
- 8
- Number
- 10
- Start Page
- 3164
- End Page
- 3176
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/47480
- DOI
- 10.1007/s12274-015-0816-9
- Abstract
- Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 µm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD. [Figure not available: see fulltext.] © 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
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Collections - Graduate School > Energy Science > 1. Journal Articles
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