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Surface passivation schemes for high-efficiency c-Si solar cells - A reviewSurface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review
- Other Titles
- Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review
- Authors
- Balaji, N.[Balaji, N.]; Hussain, S.Q.[Hussain, S.Q.]; Park, C.[Park, C.]; Raja, J.[Raja, J.]; Yi, J.[Yi, J.]; Jeyakumar, R.[Jeyakumar, R.]
- Issue Date
- 2015
- Publisher
- 한국전기전자재료학회
- Keywords
- Al2O3; Passivation; SiNx; SiO2
- Citation
- Transactions on Electrical and Electronic Materials, v.16, no.5, pp.227 - 233
- Indexed
- SCOPUS
KCI
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 16
- Number
- 5
- Start Page
- 227
- End Page
- 233
- ISSN
- 1229-7607
- Abstract
- To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells. © 2015 KIEEME. All rights reserved.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)