The influence of hydrogenation on the electrical properties of impurity-contaminated silicon grain boundariesThe Influence of Hydrogenation on the Electrical Properties of Impurity-Contaminated Silicon Grain Boundaries
- Other Titles
- The Influence of Hydrogenation on the Electrical Properties of Impurity-Contaminated Silicon Grain Boundaries
- Authors
- Park, Y.[Park, Y.]; Lu, J.[Lu, J.]; Park, J.-H.[Park, J.-H.]; Rozgonyi, G.[Rozgonyi, G.]
- Issue Date
- 2015
- Publisher
- 대한금속·재료학회
- Keywords
- electrical properties of Si grain boundaries; hydrogen passivation; Fe contamination; hybrid orientation DSB wafers; C-V analyses; C-t analyses
- Citation
- Electronic Materials Letters, v.11, no.6, pp.993 - 997
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Electronic Materials Letters
- Volume
- 11
- Number
- 6
- Start Page
- 993
- End Page
- 997
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/49666
- DOI
- 10.1007/s13391-015-5214-7
- ISSN
- 1738-8090
- Abstract
- In this article, the impact of hydrogenation on the electrical properties of impurity (Fe)-contaminated silicon grain boundaries (GBs) is investigated using capacitance-voltage (C-V) and capacitance transient (C-t) techniques with hybrid orientation direct-silicon-bonded (DSB) wafers. The samples consist of a 2.3 μm thick (110) Si layer on a p-type (100) Si substrate produced via hydrophilic wafer bonding, cleavage, and epithickening. It was found that for a relatively clean GB, the density of the GB states (DGB) is ∼6 × 1012 eV−1cm−2, and the charge neutral level is ∼0.53 eV from the valance band. DGB increases to more than 2 × 1013 eV−1cm−2after the Fe contamination, which is reduced to ∼1 × 1013 eV−1cm−2 after the hydrogenation treatment. The charge neutral level, which shifts toward the conduction band after the Fe contamination, is reversed after hydrogenation. © 2015, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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