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Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (alpha-Ge)
- Issue Date
- Dec-2014
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Amorphous materials; X-ray diffraction; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.60, pp.814 - 818
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 60
- Start Page
- 814
- End Page
- 818
- ISSN
- 0025-5408
- Abstract
- In this paper, metal-induced crystallization (MIC) phenomenon on alpha-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 degrees C and 400 degrees C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 degrees C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains. (C) 2014 Elsevier Ltd. All rights reserved.
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Related Researcher
- PARK, JIN HONG
- Information and Communication Engineering (Electronic and Electrical Engineering)