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A Wide Output Range, High Power Efficiency Reconfigurable Charge Pump in 0.18 mu m BCD process

Authors
Park, HG[Park, Hyung-Gu]Jang, JA[Jang, Jeong-A]Cho, SH[Cho, Sung Hun]Lee, J[Lee, Juri]Kim, SY[Kim, Sang-Yun]Tiwari, HD[Tiwari, Honey Durga]Pu, YG[Pu, Young Gun]Hwang, KC[Hwang, Keum Cheol]Yang, Y[Yang, Youngoo]Lee, KY[Lee, Kang-Yoon]Seo, M[Seo, Munkyo]
Issue Date
Dec-2014
Publisher
IEEK PUBLICATION CENTER
Keywords
Charge pump; reconfigurable; high power efficiency; wide output range
Citation
Journal of Semiconductor Technology and Science, v.14, no.6, pp.777 - 788
Indexed
SCIE
SCOPUS
KCI
Journal Title
Journal of Semiconductor Technology and Science
Volume
14
Number
6
Start Page
777
End Page
788
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/50747
DOI
10.5573/JSTS.2014.14.6.777
ISSN
1598-1657
Abstract
This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using 0.18 mu m BCD process with high power MOSFET options, and the die area is 1870 mu m x 1430 mu m. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.
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