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Continuous phase transitions in high-mobility Si MOSFETs at finite temperatures
- Authors
- Limouny, L[Limouny, L.]; El Kaaouachi, A[El Kaaouachi, A.]; Tata, A[Tata, A.]; El Idrissi, H[El Idrissi, H.]; Liang, CT[Liang, C. -T.]
- Issue Date
- Nov-2014
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Metal-insulator transition; 2D electron systems; Si-MOSFETs; Critical density; Continuous phase transitions
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.75, pp.287 - 293
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 75
- Start Page
- 287
- End Page
- 293
- ISSN
- 0749-6036
- Abstract
- We re-analyze earlier published data on two dimensional electron system Si-MOSFETs sample, in which a transition from metallic to insulator (MIT) behavior was observed. Our results indicate the existence of continuous phase transition at finite temperatures. We have focused our work around the critical density Tic of the MIT, where n(c) approximate to 0.712 x 10(11) cm(-2), and we have found that the two suggestive phase transitions revealed in previous work, persist at finite temperatures by plotting log(10) rho and dlog(10) sigma/dn(s), against carrier density n(s). However, the graphics displaying log(10) rho (n(s)) and dlog(10) sigma/dn(s) (n(s)) share a peak located almost at the same value of the carrier density n(s)* approximate to 1 x 10(11) cm(-2) remarkably higher than the critical density tic in contrast to earlier work, where this peak is located just at n(c). (C) 2014 Elsevier Ltd. All rights reserved.
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