Study on Various Device Structures for Steep-Switching Silicon-on-Insulator Feedback Field-Effect Transistors
- Authors
- Lee, Changhoon; Shin, Changhwan
- Issue Date
- Apr-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Logic gates; Threshold voltage; Transistors; Energy barrier; Performance evaluation; Silicon-on-insulator; Charge carrier processes; Feedback field-effect transistor (FBFET); silicon-on-insulator (SOI); stacked FBFET
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.4, pp 1852 - 1858
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 67
- Number
- 4
- Start Page
- 1852
- End Page
- 1858
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/5159
- DOI
- 10.1109/TED.2020.2975007
- ISSN
- 0018-9383
1557-9646
- Abstract
- The feedback field-effect transistor (FBFET) is a new type of transistor that uses a positive feedback mechanism, which enables the FBFET to exhibit steep-switching characteristics, i.e., subthreshold swing (SS) < 60 mV/decade at 300 K. The silicon-on-insulator (SOI) FBFET, which was studied previously, can be optimized by adjusting the fin height and fin width. For a given effective channel width, a device with low average SS and high ON-state drive current can be designed by stacking gate-all-around channels. In this article, for given various design parameters, the performance metrics of various stacked SOI FBFET device structures are compared. In addition, we investigated the transient characteristics of the SOI FBFETs. Using mixed-mode simulations, we confirmed whether the ON- OFF switching characteristics are completely implemented over time or not.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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