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Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation
- Authors
- Il Kim, D[Il Kim, Dong]; Hong, YK[Hong, Young Ki]; Lee, SH[Lee, Suk Ho]; Kim, J[Kim, Jeongyong]; Joo, J[Joo, Jinsoo]
- Issue Date
- Sep-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ZnO; Nanowire; Focused electron beam; Electron irradiation; Photoluminescence
- Citation
- CURRENT APPLIED PHYSICS, v.14, no.9, pp.1228 - 1233
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Number
- 9
- Start Page
- 1228
- End Page
- 1233
- ISSN
- 1567-1739
- Abstract
- ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 mu m. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 x 10(17)-1.0 x 10(18) electrons/cm(2). The resistivity of a single ZnO NW increased from 56 to 1800 Omega cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation. (C) 2014 Elsevier B.V. All rights reserved.
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Related Researcher
- KIM, JEONG YONG
- Institute for Cross-disciplinary Studies (ICS) (Energy)