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Highly transparent RF magnetron-sputtered indium tin oxide films for a-Si:H/c-Si heterojunction solar cells amorphous/crystalline silicon
- Authors
- Hussain, SQ[Hussain, Shahzada Qamar]; Oh, WK[Oh, Woong-Kyo]; Ahn, S[Ahn, Shihyun]; Le, AHT[Anh Huy Tuan Le]; Kim, S[Kim, Sunbo]; Iftiquar, SM[Iftiquar, S. M.]; Velumani, S[Velumani, Subramaniam]; Lee, Y[Lee, Youngseok]; Yi, J[Yi, Junsin]
- Issue Date
- Aug-2014
- Publisher
- ELSEVIER SCI LTD
- Keywords
- ITO films; RF power; Carrier lifetime; Anti-reflection electrode; amorphous/crystalline silicon
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.24, pp.225 - 230
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 24
- Start Page
- 225
- End Page
- 230
- ISSN
- 1369-8001
- Abstract
- We prepared highly transparent magnetron-sputtered indium tin oxide (ITO) films deposited at various RF powers for a-Si:H(p)/c-Si heterojunction solar cell applications. The surface morphology of ITO films improved in terms of an increase in grain size as the RF power increased. Rapid growth of the (400) plane was observed with increasing RF power, while the (222) plane remain unchanged. The ITO film deposited at 100 W showed the lowest resistivity of 3.8 x 10(-4) Omega cm and highest visible transmittance of 90.19%. The deposition rate and optical bandgap of ITO films were varied from 20 to 100 nm/min and from 3.68 to 3.77 eV for RF power from 50 to 250 W, respectively. Highly transparent ITO films were utilized as the front anti-reflection layer in heterojunctions with intrinsic thinlayer (HIT) solar cells showed the efficiency of 16.3% for RF power of 100 W. The HIT solar cells deposited at RF power of 100 W also exhibited higher carrier lifetime and implied voltage. (C) 2014 Elsevier Ltd. All rights reserved.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)