Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
- Authors
- Van, NH[Ngoc Huynh Van]; Lee, JH[Lee, Jae-Hyun]; Sohn, JI[Sohn, Jung Inn]; Cha, S[Cha, SeungNam]; Whang, D[Whang, Dongmok]; Kim, JM[Kim, Jong Min]; Kang, DJ[Kang, Dae Joon]
- Issue Date
- 23-May-2014
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Si nanowires; field effect transistor; ferroelectric memory
- Citation
- NANOTECHNOLOGY, v.25, no.20
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 25
- Number
- 20
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/52985
- DOI
- 10.1088/0957-4484/25/20/205201
- ISSN
- 0957-4484
- Abstract
- We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (<= 3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 10(5), a long retention time of over 3 x 10(4) s and a high endurance of over 10(5) programming cycles whilst maintaining an I-ON/I-OFF ratio higher than 10(3). This result may be promising for next-generation nonvolatile memory on flexible substrate applications.
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- Appears in
Collections - Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
- Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Science > Department of Physics > 1. Journal Articles
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