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Performance Degradation of c-Si Solar Cells Under UV Exposure
- Authors
- Kim, H[Kim, Hyojung]; Choi, P[Choi, Pyungho]; Kim, K[Kim, Kwangsoo]; Kuh, H[Kuh, Hyungsuk]; Beak, D[Beak, Dohyun]; Lee, J[Lee, Jaehyung]; Yi, J[Yi, Junsin]; Choi, B[Choi, Byoungdeog]
- Issue Date
- May-2014
- Keywords
- C-Si solar cell; C-V; I-V; Performance degradation; UV exposure
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.5, pp.3561 - 3563
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 5
- Start Page
- 3561
- End Page
- 3563
- ISSN
- 1533-4880
- Abstract
- Current Voltage (I-V) and Capacitance-Voltage (C-V) characteristics of crystalline silicon solar cells were obtained under UV exposure. The solar cell parameters degraded with increasing exposure time. For example, open-circuit voltage (V-oc), short-circuit current (J(sc)), fill-factor (FF) and efficiency (eta) were degraded. In this study, solar cell did not degrade at the p-n junction or silicon substrate effective lifetime by UltraViolet (UV) light exposure. The main degradation occurred at the SiNx layer, the commonly used anti-reflection coating (ARC), due to the positive charges generated by the high-energy UV light source. UV light changed the characteristics of the SiNx layer and the Si/SiNx interface to degrade the cell efficiency.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)