Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
- Authors
- Lee, JH[Lee, Jae-Hyun]; Lee, EK[Lee, Eun Kyung]; Joo, WJ[Joo, Won-Jae]; Jang, Y[Jang, Yamujin]; Kim, BS[Kim, Byung-Sung]; Lim, JY[Lim, Jae Young]; Choi, SH[Choi, Soon-Hyung]; Ahn, SJ[Ahn, Sung Joon]; Ahn, JR[Ahn, Joung Real]; Park, MH[Park, Min-Ho]; Yang, CW[Yang, Cheol-Woong]; Choi, BL[Choi, Byoung Lyong]; Hwang, SW[Hwang, Sung-Woo]; Whang, D[Whang, Dongmok]
- Issue Date
- 18-Apr-2014
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Citation
- SCIENCE, v.344, no.6181, pp.286 - 289
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE
- Volume
- 344
- Number
- 6181
- Start Page
- 286
- End Page
- 289
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/53318
- DOI
- 10.1126/science.1252268
- ISSN
- 0036-8075
- Abstract
- The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.
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- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Science > Department of Physics > 1. Journal Articles
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