Effective mass and Land, g-factor in Si-MOSFETs near the critical density
- Authors
- Limouny, L[Limouny, Lhoussine]; El Kaaouachi, A[El Kaaouachi, Abdelhamid]; Liang, CT[Liang, Chi-Te]
- Issue Date
- Feb-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- 2D Si-MOFSETs; Metal-insulator transition; Spin susceptibility; Effective mass; Lande g-factor; Parallel magnetic field
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.3, pp.424 - 428
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 64
- Number
- 3
- Start Page
- 424
- End Page
- 428
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/54160
- DOI
- 10.3938/jkps.64.424
- ISSN
- 0374-4884
- Abstract
- We analyze the electrical resistivity and conductivity of a dilute two-dimensional electron gas (2DEG) in a Si metal-oxide-semiconductor field-effect transistor. When a magnetic field is applied parallel to the plane of the 2DEG, a signature of complete spin polarization, as evidenced by the saturation of the resistivity, is observed. We measured the effective mass and the Land, g-factor near the metal-insulator transition (MIT) and found that the Land, g-factor remained almost constant and close to its value in bulk silicon. In contrast, we have observed a sharp increase in the effective mass near the critical density of the MIT. Our new results suggest that the sharp increase in the previously-observed spin susceptibility is mainly due to the enhanced effective mass. Therefore, renormalization of the effective mass could play an important role in a dilute spinpolarized 2DEG. The data indicate that electron-electron interactions strongly modify the effective mass but only weakly affect the g-factor in a dilute 2DEG. Moreover, our results indicate that B (c) , which corresponds to the magnetic field at which the magnetoresistivity reaches saturation, vanishes at a characteristic density n (chi) higher than the critical density n (c) of the MIT. This is in contrast to the existing experimental results, and further studies are required if this discrepancy is to be understood.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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