Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction arrayopen access
- Authors
- Chen, WJ[Chen, Wei-Jen]; Wu, JK[Wu, Jen-Kai]; Lin, JC[Lin, Jheng-Cyuan]; Lo, ST[Lo, Shun-Tsung]; Lin, HD[Lin, Huang-De]; Hang, DR[Hang, Da-Ren]; Shih, MF[Shih, Ming Feng]; Liang, CT[Liang, Chi-Te]; Chang, YH[Chang, Yuan Huei]
- Issue Date
- 5-Jul-2013
- Publisher
- SPRINGER
- Keywords
- Violet luminescence; p-type ZnO; Photoluminescence
- Citation
- NANOSCALE RESEARCH LETTERS, v.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 8
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/59956
- DOI
- 10.1186/1556-276X-8-313
- ISSN
- 1931-7573
- Abstract
- A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (V-Zn), the Sb-Zn-2V(Zn) complex. This Sb-Zn-2V(Zn) complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.