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Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization
- Authors
- Jung, HW[Jung, Hyun-Wook]; Jung, WS[Jung, Woo-Shik]; Yu, HY[Yu, Hyun-Yong]; Park, JH[Park, Jin-Hong]
- Issue Date
- 5-Jun-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Polycrystalline germanium; Solid phase crystalliza
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.561, pp.231 - 233
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 561
- Start Page
- 231
- End Page
- 233
- ISSN
- 0925-8388
- Abstract
- Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in alpha-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of similar to 10(17) in SPC and similar to 10(16) in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of similar to 35 cm(2)/V s and similar to 30 cm(2)/V s at 500 degrees C and 400 degrees C. (C) 2013 Elsevier B.V. All rights reserved.
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Related Researcher
- PARK, JIN HONG
- Information and Communication Engineering (Electronic and Electrical Engineering)