Channel Strain Measurement of Si1-xCx Structures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation
- Authors
- Kim, SW[Kim, Sun-Wook]; Byun, DS[Byun, Dae-Seop]; Jung, M[Jung, Mijin]; Chopra, S[Chopra, Saurabh]; Kim, Y[Kim, Yihwan]; Kim, JH[Kim, Jae-Hyun]; Han, SM[Han, Seung-Min]; Ko, DH[Ko, Dae-Hong]; Lee, HJ[Lee, Hoo-Jeong]
- Issue Date
- Jun-2013
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- APPLIED PHYSICS EXPRESS, v.6, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 6
- Number
- 6
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/60397
- DOI
- 10.7567/APEX.6.066601
- ISSN
- 1882-0778
- Abstract
- This study examined the dimensional effects on the channel strain in transistor structures with epitaxial Si1-xCx stressors embedded in the source/drain region using both nanobeam diffraction and finite element simulations. The sizes of the gate and source/drain exerted a strong influence on the channel strain but in opposite directions: While declining linearly with decreasing source/drain length, the channel strain increases at an escalating rate with decreasing gate length. For source/drain elevation, its effects on the channel strain were found to be quite limited to the top surface region; however, this elevation method could be more effective for short-channel transistors. (C) 2013 The Japan Society of Applied Physics
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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