Determination of the Drain Saturation Voltage of a Metal-Oxide-Semiconductor Field-Effect Transistor by the Capacitance-Voltage Method
- Authors
- Kim, K[Kim, Kwangsoo]; Choi, P[Choi, Pyungho]; Kim, H[Kim, Hyungjoon]; Park, H[Park, Hyoungsun]; Choi, B[Choi, Byoungdeog]
- Issue Date
- Jun-2013
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 6
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/60401
- DOI
- 10.7567/JJAP.52.068005
- ISSN
- 0021-4922
- Abstract
- In this paper, we present a simple technique to extract drain saturation voltage using the drain junction capacitance-voltage data of a metal-oxide-semiconductor field-effect transistor (MOSFET). When voltage is applied to the gate terminal, the drain and source are connected electrically via a surface inversion charge, and drain junction capacitance increases. When drain voltage increases, the pinch-off occurs at the drain end of the channel, and drain junction capacitance is rapidly reduced. Through this phenomenon, we can extract the drain saturation voltage directly from the drain junction capacitance-voltage curve without using complex mathematical formulas. (C) 2013 The Japan Society of Applied Physics
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/60401)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.