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Influence of SnO2:F/ZnO:Al bi-layer as a front electrode on the properties of p-i-n amorphous silicon based thin film solar cells
- Authors
- Park, H[Park, Hyeongsik]; Lee, J[Lee, Jaehyeong]; Kim, H[Kim, Heewon]; Kim, D[Kim, Doyoung]; Raja, J[Raja, Jayapal]; Yi, J[Yi, Junsin]
- Issue Date
- 13-May-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.19
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 19
- ISSN
- 0003-6951
- Abstract
- The effect of aluminum doped zinc oxide film used between a fluorine doped tin oxide layer and a hydrogenated amorphous silicon carbide layer to improve the open circuit voltage (V-oc) and fill factor (FF) for high efficiency thin film solar cells. The efficiency enhancement was accomplished by the insertion of high work-function layers engineered in the interfaces to raise FF as well as V-oc. Therefore, we were able to obtain the conversion efficiency of 10.34% at 16.14mA/cm(2) of the current density (J(sc)) and 70.37% of FF. (C) 2013 AIP Publishing LLC.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)