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Hydrazine-Based Fermi-Level Depinning Process on Metal/Germanium Schottky Junction
- Issue Date
- May-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Fermi-level depinning; Germanium; hydrazine; passi
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.5, pp.599 - 601
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 5
- Start Page
- 599
- End Page
- 601
- ISSN
- 0741-3106
- Abstract
- In this letter, we propose a hydrazine (N2H4)-based nitridation process, which reduces the native oxide (GeOx) component and finally transforms it into GeOxNy on intrinsic Ge, to relieve the E-F pinning problem. The decomposition of GeOx and formation of GeOxNy by N2H4 are systematically investigated through cross-sectional transmission election microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy analyses. After performing the N2H4-based nitridation process for 12 h, high Phi(H) (similar to 0.59 eV) and therefore high ON/OFF current ratio (similar to 10(4)) are achieved for Ti/Ge Schottky junction diode.
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Related Researcher
- PARK, JIN HONG
- Information and Communication Engineering (Electronic and Electrical Engineering)