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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
- Authors
- Raja, J[Raja, Jayapal]; Jang, K[Jang, Kyungsoo]; Balaji, N[Balaji, Nagarajan]; Choi, W[Choi, Woojin]; Trinh, TT[Thanh Thuy Trinh]; Yi, J[Yi, Junsin]
- Issue Date
- 25-Feb-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 8
- ISSN
- 0003-6951
- Abstract
- Stability of negative bias temperature stress (NBTS) of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333K exhibit a larger negative Delta V-TH (-3.21 V) with an unpredictable sub-threshold swing (SS) of hump shaped transfer curve due to the creation of meta-stable traps. Defects related hump formation has disappeared with small Delta V-TH (-1.13 V) and Delta SS (0.018 V/dec) in nitrogen doped a-IGZO TFT. It is observed that nitrogen doping enhances device stability by well controlled oxygen vacancy and trap sites in channel and channel/dielectric interface. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793535]
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)