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Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium n(+)/p Junction
- Authors
- Shim, J[Shim, Jaewoo]; Song, I[Song, I.]; Jung, WS[Jung, W. -S.]; Nam, J[Nam, J.]; Leem, JW[Leem, J. W.]; Yu, JS[Yu, J. S.]; Kim, DE[Kim, D. E.]; Cho, WJ[Cho, W. J.]; Kim, YS[Kim, Y. S.]; Jun, DH[Jun, D. -H.]; Heo, J[Heo, J.]; Park, W[Park, W.]; Park, JH[Park, Jin-Hong]; Saraswat, KC[Saraswat, K. C.]
- Issue Date
- Jan-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Defect; germanium (Ge); n(+)/p junction
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.15 - 17
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 1
- Start Page
- 15
- End Page
- 17
- ISSN
- 0741-3106
- Abstract
- In this letter, we investigate the electrical behavior of vacancy V-Ge defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n(+)/p junction diodes were also studied with J-V, transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The V-Ge defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500 degrees C. Therefore, an optimal postfabrication annealing process at 600 degrees C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.
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Related Researcher
- PARK, JIN HONG
- Information and Communication Engineering (Electronic and Electrical Engineering)