The electrical, optical, and structural properties of amorphous indium gallium zinc oxide films and channel thin-film transistors
- Authors
- Jung, CH[Jung, C. H.]; Kang, HI[Kang, H. I.]; Yoon, DH[Yoon, D. H.]
- Issue Date
- Jan-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Transparent amorphous oxide semiconductor; a-IGZO
- Citation
- SOLID-STATE ELECTRONICS, v.79, pp.125 - 129
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 79
- Start Page
- 125
- End Page
- 129
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/61996
- DOI
- 10.1016/j.sse.2012.10.002
- ISSN
- 0038-1101
- Abstract
- The electrical, optical, and structural properties of amorphous indium gallium zinc oxide (a-IGZO) films deposited at room temperature (RI) examined before and after annealing using a radio frequency (RF) magnetron sputtering system with different hydrogen and oxygen gas flow ratios. The carrier concentration and resistivity of the a-IGZO films fabricated under O-2/Ar + O-2 and O-2/Ar-4%H-2 + O-2 atmospheres were greatly dependent on the addition of hydrogen and heat treatment. Thin-film transistors (TFTs) with an a-IGZO channel layer deposited under O-2/Ar-4%H-2 + O-2 = 1.6% exhibited good subthreshold gate voltage swing (S), on/off ratio, threshold voltage and mu(FE) of 0.4 V decade(-1), 10(8), 0.3 V and 4.8 cm(2) V-1 s(-1), respectively. From analysis of the interfacial structure in TFTs before and after annealing, the electrical conductivity of the a-IGZO channel layer was greatly affected in regard to TFT performance due to the amorphous a-IGZO channel layer and SiO2 gate insulator. (C) 2012 Elsevier Ltd. All rights reserved.
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Collections - Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
- Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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