Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel
- Authors
- Raja, J[Raja, Jayapal]; Jang, K[Jang, Kyungsoo]; Nguyen, HH[Hong Hanh Nguyen]; Trinh, TT[Thanh Thuy Trinh]; Choi, W[Choi, Woojin]; Yi, J[Yi, Junsin]
- Issue Date
- Jan-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- a-IGZO TFTs; Film densification; Interface trap de
- Citation
- CURRENT APPLIED PHYSICS, v.13, no.1, pp.246 - 251
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 13
- Number
- 1
- Start Page
- 246
- End Page
- 251
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/62017
- DOI
- 10.1016/j.cap.2012.07.016
- ISSN
- 1567-1739
- Abstract
- a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (p(d)) in the range of 0.74-2.22 W/cm(2). The correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of p(d). At a p(d) of 1.72 W/cm(2) a-IGZO film had smoothest surface roughness (0.309 nm) with In-rich and Ga-poor cation compositions as a channel. This structurally ordered TFTs exhibited a high field effect mobility of 9.14 cm(2)/Vs, a sub-threshold swing (S.S.) of 0.566 V/dec, and an on-off ratio of 10(7). Additionally, the V-th shift in hysteresis loop is almost eliminated. It was shown that the densification of the a-IGZO film resulted in the reduction of its interface trap density (1.83 x 10(12) cm(-2)), which contributes for the improvement in the electrical and thermal stability. (C) 2012 Elsevier B.V. All rights reserved.
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